マグネトロンスパッタ法によるInN薄膜の作成と特性 Properties of InN Films Prepared by Magnetron Sputtering
Indium nitride thin films were prepared by the reactive magnetron sputtering method. The indium target was sputtered by pure nitrogen gas. The effects of sputtering pressure <I>P</I> on the structural, optical and electrical properties of the films were investigated. With increasing <I>P</I>, the depo-sion rate of the films decreased, and the film structure changed from crystalline phase with a hexagonal wurtzite structure to amorphous one, together with the increase in the bandgap. It is found that the electrical conductivity, carrier concentration and Hall mobility showed minimum against <I>P</I>.
真空 42(3), 272-274, 1999-03
The Vacuum Society of Japan