Ga2O3+In2O3 Optical Recording Films Prepared by Pulsed Laser Deposition.

DOI Web Site 6 References
  • AOKI Takanori
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • KAIMI Hideki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • SUZUKI Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • MATSUSHITA Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • OKUDA Masahiro
    Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

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Other Title
  • パルスレーザー堆積法により作製したＧａ２Ｏ３＋Ｉｎ２Ｏ３光記録膜
  • パルスレーザー タイセキホウ ニ ヨリ サクセイ シタ Ga2O3 In2O3 ヒカリ キロク マク

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Abstract

The Ga-In oxide films (100150 nm) have been deposited on glass and quartz substrates by irradiating the pulsed laser beam of an ArF laser (λ=193 nm) on the split target composed of Ga2O3 and In2O3 (99.999% purity). In all experiments, a repetition rate of 10 Hz, an energy density of 0.4 J/cm2, an irradiation time of 12-15 min (7200-9000 shots) and a target-to-substrate distance of 4 cm were used. It was found from optical spectra that for the Ga-In oxide films prepared with a moved distance of Ga2O3 : In2O3=3 : 1 on the split target, there was a difference in the transmittance of greater than 66% near 350 nm wavelength, between the annealed (transparent, Egopt= 4.2 eV) and the asdeposited state (opaque, Egopt= 2.0 eV). The ability to record on the Ga-In oxide films without a protection layer, using THG of Nd : YAG (λ= 355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelength region.

Journal

  • Shinku

    Shinku 42 (3), 313-316, 1999

    The Vacuum Society of Japan

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