高周波スパッタ法により作製したＧａＩｎ系酸化物光記録膜

• 青木 孝憲

  大阪産業大学工学部電気電子工学科

• 海見 英樹

  大阪産業大学工学部電気電子工学科

• 鈴木 晶雄

  大阪産業大学工学部電気電子工学科

• 松下 辰彦

  大阪産業大学工学部電気電子工学科

• 奥田 昌宏

  大阪府立大学工学部電子物理工学科

書誌事項

タイトル別名

• Optical Recording Ga-In-oxide Films Prepared by Radio-Frequency Sputtering.
• コウシュウハ スパッタホウ ニ ヨリ サクセイ シタ GaInケイ サンカブツ ヒカリ キロク マク

抄録

Thin films of Ga-In oxide (100 nm) have been deposited, at an Ar pressure of 4 Pa, on glass substrate at room temperature by radio-frequency (rf) magnetron sputtering with two targets of Ga₂O₃ and metallic In, on which rf-power of 150 W and 60 W were added respectively. In the oxide films prepared by this method, the difference in the transmittance, ΔT, between the annealed (300°C × 10 min) and the as-deposited state was more than 60% in the wavelength region of 350600 nm. It was found from XRD spectra that (1) the In (101) peak was formed in the as-deposited state (colored state) and (2) the In₂O₃ (222) peak was formed in the annealed state (transparent state). The ability to record on these oxide films without protection layer, using THG of Nd : YAG laser (λ=355 nm, 3 ns) was confirmed. These results will be useful for highly sensitive optical recording films with high density in the ultraviolet-blue wavelenght region.

収録刊行物

• 真空

  真空 42 (3), 317-320, 1999

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390001204065379840
• NII論文ID: 10002476525
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.42.317
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 4715340
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4715340
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可