Thermoelectric Properties of Iron Silicide Based Semiconductors Fabricated by Dip-Treatment into Silver Nitrate Solution

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  • Watanabe Tetsuya
    Department of Chemical and Biological Engineering, Sasebo National College of Technology
  • Hasaka Masayuki
    Department of Materials Science and Engineering, Nagasaki University

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Other Title
  • AgNO<SUB>3</SUB>溶液処理したFeSi<SUB>2</SUB>系熱電半導体の熱電特性
  • AgNO3溶液処理したFeSi2系熱電半導体の熱電特性
  • AgNO3 ヨウエキ ショリ シタ FeSi2ケイ ネツデンハンドウタイ ノ ネツデントクセイ

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Abstract

Ag was added to FeSi2-1 at%M (M=Mn, Co) for fabricating a thermoelectric semiconductor with high-generating power by the means of lowering resistivity. Samples were produced in the following procedure. FeSi2-1 at%M (M=Mn, Co) ingots were fabricated by high-frequency melting method in a vacuum. These were ground into powders and then, these powders were dipped into AgNO3 solution. Through the process, Ag adhered to these powders. After the powders were made into tablets, they were sintered at 1373 K for 18 ks in a vacuum. Then the sintered samples were heat treated to make semiconductor at 1063 K for 360 ks. Thermoelectromotive forces and resistivities of the samples were examined. It turned out that while thermoelectromotive forces hardly changed, the level of resistivities was reduced. As a result, the power factor of the FeSi2-1 at%Co containing 3 at%Ag was six times larger than that of FeSi2-1 at%Co, at 573 K.

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