書誌事項
- タイトル別名
-
- Frontiers in Crystallography with Synchrotron Radiation. Utilizing of Various Properties of Synchrotron Radiation. Characterization of Thin Films with X-ray Total Reflection Technology.
- ゼン ハンシャ オ リヨウシテ チョウ ハクマク オ シラベル
この論文をさがす
抄録
Characterization of thin films with x-ray total reflection is introduced. Titanium silicite thin films are studied by grazing incidence x-ray diffraction. The epitaxial C49-TiSi2 grains are formed on heavily BF2 ion implanted Si (001) substrate after low temperature annealing, and they suppress the phase transition from C49 to C54 during high temperature annealing. SiO2 thin films are investigated by x-ray reflectivity analysis. Thermal oxides have always the high density interface layer of -1 nm in thickness. Extremely thin native oxides on Si is also characterized in a function of chemical cleaning solutions.
収録刊行物
-
- 日本結晶学会誌
-
日本結晶学会誌 39 (1), 89-93, 1997
日本結晶学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390282679064159744
-
- NII論文ID
- 10002589303
-
- NII書誌ID
- AN00188364
-
- ISSN
- 18845576
- 03694585
-
- NDL書誌ID
- 4159574
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可