On the Non-existence of Diatomic .BETA.-Tin as a High-pressure Structure and Structural Systematics of the II-VI,III-V and Group IV Semiconductors.

• Nelmes R. J.

  Department of Physics and Astronomy, University of Edinburgh

• McMahon M. I.

  Department of Physics, University of Liverpool

• Belmonte S. A.

  Department of Physics and Astronomy, University of Edinburgh

• Allan D. R.

  Department of Physics and Astronomy, University of Edinburgh

Bibliographic Information

Other Title

• On the Non-existence of Diatomic β-Tin as a High-pressure Structure and Structural Systematics of the 2-6,3-5 and Group 4 Semiconductors
• On the Non-existence of Diatomic ベーターTi

Abstract

Many high-pressure phases of the III-V and II-VI semiconductors have been believed to have the diatomic equivalent of the tetragonal β-tin structure. Recent work has shown this to be incorrect in several cases. It is now shown that the same is strue of all the remaining possibilities - AlSb, HgSe, InP and GaP. The phases concerned all have orthorhombic structures of the Cmcm type. The apparent non-existence of the β-tin structure has important implications for the structural systematics.

Journal

• The Review of High Pressure Science and Technology

  The Review of High Pressure Science and Technology 7 379-381, 1998

  The Japan Society of High Pressure Science and Technology

Keywords

• AlSb
• HgSe
• InP
• GaP
• crystal structure
• synchrotron
• image plate
• angle-dispersive

Details

• CRID: 1390282679359038848
• NII Article ID: 10002690206
• NII Book ID: AN10452913
• DOI: 10.4131/jshpreview.7.379
• ISSN: 13481940
• ISSN: 0917639X
• NDL BIB ID: 4493934
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4493934
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed