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- Togaya Motohiro
- Department of Material Physics, Osaka University Faculty of Engineering Science, Osaka University
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- Sugiyama Shin
- Department of Material Physics, Osaka University Faculty of Engineering Science, Osaka University
書誌事項
- タイトル別名
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- Melting Behavior of .BETA.-SiC at High Pressure.
- Melting Behavior of ベータ SiC at High Pre
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抄録
The melting behavior of β-SiC with diamond structure was investigated under high pressures up to about 10 GPa using a flash-heating device. The peritectic temperature, at which the SiC decomposes into two phases of carbon saturated liquid Si and solid carbon (graphite) by a peritectic reaction, increases with pressure and the formation temperature of one liquid phase (l-SiC) also tends to increase with pressure. The solubility of carbon in liquid Si reach 50% at about 10 GPa and β-SiC melts directly into l-SiC.
収録刊行物
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- 高圧力の科学と技術
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高圧力の科学と技術 7 1037-1039, 1998
日本高圧力学会
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キーワード
詳細情報
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- CRID
- 1390282679359156096
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- NII論文ID
- 10002692729
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- NII書誌ID
- AN10452913
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- ISSN
- 13481940
- 0917639X
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- NDL書誌ID
- 4494139
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可