Epitaxial growth and transport properties of a new III-V diluted magnetic semiconductor : GaMnAs

  • TANAKA M.
    Department of Electronic Engineering, The University of Tokyo, Research Development Corporation of Japan
  • HAYASHI T.
    Department of Electronic Engineering, The University of Tokyo
  • NISHINAGA T.
    Department of Electronic Engineering, The University of Tokyo
  • SHIMADA H.
    Cryogenic Center, The University of Tokyo

Bibliographic Information

Other Title
  • III-V族希薄磁性半導体GaMnAsのエピタキシャル成長とその伝導特性

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Details 詳細情報について

  • CRID
    1573387448886079744
  • NII Article ID
    10002729033
  • NII Book ID
    AN10269644
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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