The formation mechanisms of paramagnetic defect centers induced by excimer lasers, γ rays, and mechanical fracturing in amorphous SiO<sub>2</sub>
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- Nishikawa Hiroyuki
- Tokyo Metropolitan University
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- Watanabe Eiki
- Tokyo Metropolitan University
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- Ito Daisuke
- Tokyo Metropolitan University
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- Ohki Yoshimichi
- Waseda University
Bibliographic Information
- Other Title
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- エキシマレーザ,γ線,および機械的応力による非晶質SiO<sub>2</sub>中の常磁性中心の生成機構
- エキシマレーザ,γ線,および機械的応力による非晶質SiO2中の常磁性中心の生成機構
- エキシマ レーザ ガンマセン オヨビ キカイテキ オウリョク ニヨル ヒショウ
- The formation mechanisms of paramagnetic defect centers induced by excimer lasers, γ rays, and mechanical fracturing in amorphous SiO<sub>2</sub>
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Abstract
The formation mechanisms of paramagnetic defect centers in amorphous SiO2 induced by excimer lasers, 60Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si-O-Si bonds as well as paramagnetic defects, is examined. Mechanism of laser or γ ray induced paramagnetic defect centers is compared with that of fracture induced ones.
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 116 (12), 1129-1137, 1996
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204599891840
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- NII Article ID
- 130006839574
- 10002820879
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 4086745
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed