Siliconizing of Molybdenum Metal in Indium-Silicon Melts

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Siliconizing of Mo to form a silicide layer was investigated in the In–Si melt alloy with a two phase mixture of a solid Si and an In–Si melt at temperatures between 1273 and 1473 K for up to 90 ks in a vacuum ampoule. The MoSi<SUB>2</SUB> layer was grown in thick because an activity of silicon in the melt alloy is close to unity, accompanied by a formation of a thin Mo<SUB>5</SUB>Si<SUB>3</SUB> layer between the MoSi<SUB>2</SUB> layer and Mo substrate. These two layers grew in accordance with a parabolic rate raw.<BR>Chemical diffusion coefficients in both the MoSi<SUB>2</SUB> and Mo<SUB>5</SUB>Si<SUB>3</SUB> layers were obtained using Wagner analysis for the diffusion couple of a Mo/Mo<SUB>5</SUB>Si<SUB>3</SUB>/MoSi<SUB>2</SUB>/Si (in the melt). Activation energies for the growth rate constants are 157 kJ/mol for the MoSi<SUB>2</SUB> and 350 kJ/mol for the Mo<SUB>5</SUB>Si<SUB>3</SUB>, respectively, and they are the same as those for chemical diffusion coefficients due to the fact that terminal compositions of 37.5 and 39.1 at%Si for both sides of the Mo<SUB>5</SUB>Si<SUB>3</SUB> layers are almost independent of temperature. Composition of 39.1 at%Si was coincided with the measured one for the two MoSi<SUB>2</SUB>+Mo<SUB>5</SUB>Si<SUB>3</SUB> phase alloy, which was smaller than 40 at%Si cited in the phase diagram. Duplex layer structure and its growth kinetics in the present In–Si melt method were consistent with those obtained in the CVD method.

収録刊行物

  • Materials transactions, JIM

    Materials transactions, JIM 39(6), 658-662, 1998-06

    社団法人 日本金属学会

参考文献:  13件中 1-13件 を表示

  • <no title>

    KIRCHER T. A.

    Mater. Soc. Eng. A155, 67, 1992

    被引用文献1件

  • <no title>

    SCHWARZ R. B.

    Mater. Soc. Eng. A155, 75, 1992

    被引用文献1件

  • <no title>

    CHOI A.

    J. of the Korean Institute of Metals and Materials 11, 1537, 1995

    被引用文献1件

  • <no title>

    PATIBANDLA N.

    J. of Material Synthesis and Processing 2, 93, 1994

    被引用文献1件

  • <no title>

    RICE M. J. Jr

    J. Electrochem Soc. 128, 1368, 1981

    被引用文献2件

  • <no title>

    Diffusion Data 4, 145, 1970

    被引用文献1件

  • <no title>

    YANAGISAWA S.

    J. Electrochem. Soc. 127, 1120, 1980

    被引用文献1件

  • <no title>

    BARTLET R. W.

    Trans. AIME 230, 1528, 1964

    被引用文献2件

  • <no title>

    SEYBOLT A. U.

    Technical Documentary Report No. ASD-TDR-63-309 Part II 31, 1964

    被引用文献1件

  • <no title>

    SAMPATH S.

    J. of Metals 42, 1993

    被引用文献1件

  • <no title>

    Binary alloy phase diagram 3, 2261,2293,2666, 1990

    被引用文献1件

  • <no title>

    CHRISTIAN F.

    Mater. Trans., JIM 39, 286, 1998

    被引用文献1件

  • <no title>

    WAGNER C.

    Acta Metall. 17, 99, 1969

    被引用文献2件

被引用文献:  2件中 1-2件 を表示

各種コード

  • NII論文ID(NAID)
    10003802935
  • NII書誌ID(NCID)
    AA10699969
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    09161821
  • NDL 記事登録ID
    4505432
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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