Determination of Seventeen Impurities in High-Purity Titanium and Titanium Disilicide by ICP-Atomic Emission Spectrometry

  • Yamada Kei
    Materials Physics Division, National Research Institute for Metals
  • Hasegawa Ryosuke
    Materials Physics Division, National Research Institute for Metals
  • Kujirai Osamu
    Materials Processing Division, National Research Institute for Metals

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  • Determination of Seventeen Impurities i

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Abstract

Traces of Ba, Bi, Ca, Cd, Co, Cu, Ga, In, Li, Mg, Mn, Na, Ni, Pb, Sr, Tl and Zn in high-purity Ti and titanium disilicide (TiSi2) were determined by inductively coupled plasma-atomic emission spectrometry (ICP-AES). The samples were dissolved in hydrofluoric acid and nitric acid, and Si was removed by vaporization in the case of TiSi2. The impurities were separated from the Ti matrix with a horizontal cation exchange resin. The separation conditions such as the acid concentration of the sample solution, resin volume, flow rate of the solution, concentration of eluant and elution directions were optimized. A reverse flow of the eluant by a peristaltic pump against the flow for the adsorption was effective for the rapid elution of all the analytes. An ultrasonic nebulizer was effectively used for the solution introduction in ICP-AES to improve sensitivity. Detection limits (3σ) of the 17 analytes were in the range of 0.08×10−6 (Sr) and 0.81×10−6 (In) kg·kg−1.

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