Electrical Conductivity and Defect Structure of Manganese Oxide-Doped Yttria-Stabilized Zirconia(3mol%Y2O3)

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  • Electrical Conductivity and Defect Structure of Manganese Oxide-Doped Yttria-Stabilized Zirconia (3 mol%Y<SUB>2</SUB>O<SUB>3</SUB>)
  • Electrical Conductivity and Defect Stru

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The oxygen partial pressure dependence of the electrical conductivity of (ZrO2-3 mol%Y2O3)1−x(MnOt)x (x=0, 0.030, 0.052, 0.076) has been measured at temperatures from 1273 to 1373 K. In the range of oxygen partial pressures from 1×105 to 1×10−5 Pa, the conductivity increased with decreasing pressure, and at less than 1×10−5 Pa, the conductivity was constant. The conductivity considerably decreased with dissolution of only 3.0 mol%MnOt, but it gradually increased over 5.2 mol%MnOt. The conductivity was thought to be equal to the ionic conductivity due to oxygen ions. A defect structure model has been proposed and the apparent mobility of the oxygen ion has been calculated under the condition that the valence state of Mn ions is +3 and +2 at PO<SUB>2</SUB> value of 1×105 Pa and 1×10−13 Pa, respectively. The oxygen partial pressure and the MnOt concentration dependence of the conductivity was discussed based on the defect structure model and the mobility.

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