Effect of Oxygen Gas Addition on Preparation of Iridium and Platinum Films by Metal-Organic Chemical Vapor Deposition

• Goto Takashi

  Institute for Materials Research, Tohoku University

• Vargas J. Roberto

  Institute for Materials Research, Tohoku University

• Hirai Toshio

  Institute for Materials Research, Tohoku University

Abstract

The effect of oxygen gas addition on deposition rates, composition and microstructure was investigated in preparing Ir and Pt films by metal-organic chemical vapor deposition using Ir- and Pt-acetylacetonate precursors. Without the addition of oxygen gas, 20 mass% of carbon at most was contained in the films. The carbon was amorphous, surrounding metal particles of several nanometers in diameter. The addition of oxygen gas is effective in obtaining carbon-free Ir and Pt films, and the films grow epitaxially on MgO and sapphire single crystal substrates.

Journal

• Materials Transactions, JIM

  Materials Transactions, JIM 40 (3), 209-213, 1999

  The Japan Institute of Metals

Keywords

• metal-organic chemical vapor deposition
• iridium film
• platinum film
• oxygen gas addition
• epitaxial growth

Details

• CRID: 1390001204248592512
• NII Article ID: 130003422594
• NII Article ID: 10003805795
• NII Book ID: AA10699969
• DOI: 10.2320/matertrans1989.40.209
• COI: 1:CAS:528:DyaK1MXjsFWqu7s%3D
• ISSN: 2432471X
• ISSN: 09161821
• HANDLE: 10097/52260
• NDL BIB ID: 4689674
• Web Site: https://tohoku.repo.nii.ac.jp/records/44188
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4689674
• Web Site: https://www.jstage.jst.go.jp/article/matertrans1989/40/3/40_3_209/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed