分子動力学法を用いたＳｉ薄膜真性応力と微細構造の解析

• 守谷 浩志

• 岩崎 富生

• 保川 彰夫

• 三浦 英生

書誌事項

タイトル別名

• Analysis of Intrinsic Stress in and Microstructure of Si Thin Films using Molecular Dynamics.
• ブンシ ドウリキガクホウ オ モチイタ Si ハクマク シンセイ オウリョク

抄録

The microstructure of silicon thin films deposited onto the (001) surface of silicon substrates and the intrinsic stress present in them were studied using three-dimensional molecular dynamics simulation. The Tersoff potential was used to represent the interaction among the silicon atoms. Simulation results show that such thin films have crystalline structures at deposition temperatures T/T_m>0.45 (T : absolute temperature, T_m : melting temperature) while they are amorphous at T/T_m<0.45. The pair correlation function and bond angle distribution for amorphous silicon obtained from our simulations agreed well with experimental results. The simulation results show that the tensile stress in amorphous silicon films increases and that the variations in stress caused by the difference in the positions at which deposited atoms impinge become larger when the substrate temperature decreases. It was verified that the intrinsic stress in silicon thin films depends strongly on the microstructure of the films.

収録刊行物

• 日本機械学会論文集Ａ編

  日本機械学会論文集Ａ編 63 (613), 1999-2005, 1997

  一般社団法人 日本機械学会

キーワード

• Molecular Dynamics
• Computational Mechanics
• Intrinsic Stress
• Thin Film
• Silicon
• Pair Correlation Function
• Bond-Angle Distribution

詳細情報

• CRID: 1390001204447876864
• NII論文ID: 110002374272
• NII論文ID: 10003820154
• NII書誌ID: AN0018742X
• DOI: 10.1299/kikaia.63.1999
• ISSN: 18848338
• ISSN: 03875008
• ISSN: http://id.crossref.org/issn/00290270
• NDL書誌ID: 4302265
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4302265
• Web Site: http://www.jstage.jst.go.jp/article/kikaia1979/63/613/63_613_1999/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可