ICTS法によるSi-MOS界面準位の測定

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  • ICTS Measurement of Si-MOS Interface States
  • ICTSホウ ニ ヨル Si MOS カイメン ジュンイ ノ ソクテイ

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Numerical simulation and the corresponding experiments have been conducted to apply isothermal capacitance transient spectroscopy (ICTS) technique to the study of Si MOS diode. The numerical simulation for the ICTS spectrum of MOS diode has been performed in consideration of both the interface states and bulk traps. The numerical simulation shows the detailed behavior of the ICTS spectrum on the interface states. As a result, it is ascertained that the spectrum of the interface states can be identified using a reverse bias technique where dependence of the spectrum on a reverse bias voltage is investigated.<br>Using gold-diffused MOS diodes, an enhancement of the interface states by the gold diffusion has been observed. Although the gold diffusion process is inevitably accompanied with thermal annealing, the influence of the thermal annealing on the interface states is eliminated with the use of an extra annealing at a low temperature in a nitrogen atmosphere. It is also ascertained that the interface states enhanced by the gold diffusion depends on the density of diffused gold.

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