Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes

• LIN Jia-Chuan

  Department of Electrical Engineering, National Cheng Kung University

• WANG Shui-Jinn

  Department of Electrical Engineering, National Cheng Kung University

• LIOU Wan-Rone

  Department of Electrical Engineering, National Taiwan Ocean University

• LUO Ying-Che

  Department of Electrical Engineering, National Cheng Kung University

• CHENG Ching-Yuan

  Department of Electrical Engineering, National Cheng Kung University

Journal

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 35 (2), 568-573, 1996-02-01

Keywords

• negative differential resistance
• δ-doping
• single barrier
• resonant tunneling diode
• quantum well
• metalorganic chemical vapor deposition

Details

• CRID: 1570009749340146944
• NII Article ID: 10004349968
• NII Book ID: AA10457675
• ISSN: 00214922
• Text Lang: en
• Data Source:
  • CiNii Articles