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- Nagamune Yasushi
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
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- Noda Takeshi
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
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- Watabe Hiroaki
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
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- Ohno Yuzo
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
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- Sakaki Hiroyuki
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
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- Arakawa Yasuhiko
- Institute of Industrial Science, University of Tokyo, 7–22–1 Roppongi, Minato–ku, Tokyo 106, Japan
この論文をさがす
抄録
We report on the photoluminescence image around a point contact fabricated in an InGaAs/GaAs quantum well using a micro-photoluminescence measurement technique. The photoluminescence image was strongly influenced by majority electron flow from the point contact, where the majority electron flow greately reduced radiative recombination of electron-hole pairs generated by the laser illumination. Using this effect we demonstrated visualization of electron flow from the point contact.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 35 (2B), 1151-1153, 1996
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681222398336
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- NII論文ID
- 210000038893
- 10004351586
- 130004522452
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- 本文言語コード
- en
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- データソース種別
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- JaLC
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- 抄録ライセンスフラグ
- 使用不可