Charge Dissipation on Chemically Treated Thin Silicon Oxide in Air.
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- Uchihashi Takayuki
- Department of Physics, Faculty of Science, Hiroshima University, Higashi–Hiroshima 739, Japan
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- Nakano Akihiko
- VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632, Japan
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- Ida Tohru
- VLSI Development Laboratories, IC Group, Sharp Corporation, 2613–1 Ichinomoto–cho, Tenri 632, Japan
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- Andoh Yasuko
- NTT Integrated Information & Energy Systems Laboratories, 3–9–11 Midori–Cho, Musashino–shi, Tokyo 180, Japan
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- Kaneko Reizo
- Department of Opto–Mechatronics, Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640, Japan
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- Sugawara Yasuhiro
- Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan
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- Morita Seizo
- Department of Electronic Engineering, Faculty of Engineering, Osaka University, Yamada–Oka, Suita 565, Japan
書誌事項
- タイトル別名
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- Charge Dissipation on Chemically Treate
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We studied the microscopic charge dissipation of densely contact-electrified charges on silicon oxides with and without a trimethylsilyl (TMS) organosilane monolayer using a modified atomic force microscope in air. Here, the TMS film was used to change a hydrophilic surface to a hydrophobic one. As a result, for both of the deposited negative and positive charges, it was clarified that the TMS film can suppress the rapid dissipation induced by surface diffusion. For the positive charge, however, the TMS film enhanced the charge dissipation induced by recombination through the TMS film and silicon oxide.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (6A), 3755-3758, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681226833152
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- NII論文ID
- 210000041297
- 10004370498
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4277712
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
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