ラジカルビーム源を用いたパルスレーザー堆積法による窒化炭素薄膜の合成と評価 Synthesis and Characterization of Carbon Nitride Thin Films by Pulsed Laser Deposition Using Radical Beam Source
Carbon nitride (CN<SUB><I>x</I></SUB> ) thin films were deposited on Corning #7059 glass and Si (100) substrates by pulsed laser deposition (PLD) using a radical beam source. The deposited films were characterized by SEM, XRD, XPS, FT-IR, and Raman spectroscopy. Nitrogen content in the films increased with increasing RF power and N<SUB>2</SUB> gas pressure in the deposition chamber. A film with N/C atomic ratio of 0.25 was obtained at 400 W of RF power and 1.3 Pa of N<SUB>2</SUB>. N 1s XPS spectra show the existence of N-<I>sp</I><SUP>2</SUP>C and N-<I>sp</I><SUP>3</SUP>C bonds in the films. The fraction of N-<I>sp</I><SUP>3</SUP>C increased with increasing nitrogen content in the film. FT-IR and Raman spectra of the deposited films indicated that N-<I>sp</I>C (N≡C) bond in the deposited films were few. The N/C atomic ratio decreased with increasing heat-treatment temperature. The fraction of N-<I>sp</I><SUP>2</SUP>C increased with increasing heat-treatment temperature. Heat-treatment of the film caused growth of graphitic domains in the film.
真空 43(3), 273-276, 2000-03-20
The Vacuum Society of Japan