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- 堀井 (前田) 直宏
- 福井工業高等専門学校電子情報工学科
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- 沖村 邦雄
- 東海大学電子工学科
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- 井上 昭浩
- 福井工業高等専門学校電子情報工学科
書誌事項
- タイトル別名
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- Photochemical Dissociation of Organic Silicon Source using Xe2 Excimer Lamp in Gas Phase.
- Xe2 エキシマー ランプ オ モチイタ ユウキ シリコン ゲンリョウ ノ キソウ ニ オケル ヒカリ ブンカイ
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抄録
Photochemical dissociation of Tetraethoxysilane (TEOS) used as an organic silicon source in the gas phase was investigated by in-situ mass spectrometry. The vacuum uliraviolet (VUV) sources for inducing photochemical reaction were Xe2 excimer lamp (172 nm : 7.2 eV) and Hg lamp (185 nm : 6.5 eV). TEOS was dissociated by irradiation of VUV in the gas phase, while releasing alkyl groups such as CxHy (x= 1-2, y=2-5). Moreover, almost all Si-O bonds of TEOS were not broken at the energy of Xe2 excimer light. It has been found that the species produced by photochemical reaction in the gas phase have long lifetime of at least more than 2 minutes. Finally, the film deposited on the MgF2 window has strong light absorption from visible to ultraviolet region, because the film contains organic compounds.
収録刊行物
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- 真空
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真空 43 (3), 288-291, 2000
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679040430720
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- NII論文ID
- 10004561694
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
- http://id.crossref.org/issn/05598516
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- NDL書誌ID
- 5361056
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可