Development of a Simulator for Cell-projection Type Electron Beam Lithography.

DOI Web Site 9 References
  • KOTERA Masatoshi
    Department of Electronic Engineering, Osaka Institute of Technology
  • YAMAGUCHI Kiyoshi
    Department of Electronic Engineering, Osaka Institute of Technology
  • MATSUOKA Koji
    Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies
  • OKAGAWA Takashi
    Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies
  • KOJIMA Yoshinori
    Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies
  • YAMABE Masaki
    Electron Beam Direct Writing Group, Semiconductor Leading Edge Technologies

Bibliographic Information

Other Title
  • 部分一括露光方式電子ビームリソグラフィ用シミュレータの開発
  • ブブン イッカツ ロコウ ホウシキ デンシ ビームリソグラフィヨウ シミュレータ ノ カイハツ

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Abstract

We developed a Monte Carlo simulation of electron trajectories in a cell-projection electron beam lithography optical system. In the simulation the emission angle, the velocity and the emission timing of electrons from the electron gun are taking into account. The Coulomb interaction among electrons in the beam is calculated. There are five lenses in the system. Assuming that the stencil mask pattern is a series of line-and-space, the exposure pattern is obtained when the current densities are 5, 10, and 13 A/cm2 at the specimen surface. The probability of electrons to enter the designed pattern as a function of the defocusing distance are calculated. The best refocus length is obtained to give the maximum probability in the designed pattern at the specimen surface.

Journal

  • Shinku

    Shinku 42 (8), 764-767, 1999

    The Vacuum Society of Japan

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