Process Technology for Micromachines. Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining.

• Kong Seongho

  Faculty of Engineering, Tohoku University

• Minami Kazuyuki

  Faculty of Engineering, Tohoku University

• Esashi Masayoshi

  Faculty of Engineering, Tohoku University

Bibliographic Information

Other Title

• Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining
• Fabrication of Reactive Ion Etching Sys

Abstract

Reactive ion etching (RIE) systems using capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources with SF₆ gas have been developed for deep silicon machining with high aspect ratio. The developed RIE systems demonstrated high etch rate (2.3μm/min) and high selectivity (1700) for a sputtered nickel mask in silicon etching. A large capacity turbo molecular pump (TMP) with a small etching chamber was used to realize a low pressure with a high flow rate of etching gas. A circulatory cooling apparatus was used for cooling a silicon wafer. Etch rate showed uniformity within 10% for the area of 50cm². Using the RIE system, we succeeded to etch a 200μm thick silicon wafer vertically through the thickness with an aspect ratio greater than 10. The RIE can be applied to fabricate three-dimensional silicon microstructures.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 117 (1), 10-14, 1997

  The Institute of Electrical Engineers of Japan

Keywords

• Si RIE
• CCP
• ICP
• Micromachining

Details

• CRID: 1390282679436977024
• NII Article ID: 10004831812
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.117.10
• ISSN: 13475525
• ISSN: 13418939
• NDL BIB ID: 4106302
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4106302
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas1995/117/1/117_1_10/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed