Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy.

• Nakahara Ken

  Optical Device R&D Division, R0HM Corp., Ltd., 21 Mizosaki-cho, Saiin, Ukyo-ku, Kyoto 615-8585, Japan

• Tanabe Tetsuhiro

  Optical Device R&D Division, R0HM Corp., Ltd., 21 Mizosaki-cho, Saiin, Ukyo-ku, Kyoto 615-8585, Japan

• Takasu Hidemi

  Optical Device R&D Division, R0HM Corp., Ltd., 21 Mizosaki-cho, Saiin, Ukyo-ku, Kyoto 615-8585, Japan

• Fons Paul

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Iwata Kakuya

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Yamada Akimasa

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Matsubara Koji

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Hunger Ralf

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Niki Shigeru

  Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan

抄録

High-quality undoped ZnO epitaxial films with mobilities as high as 120 cm²V^-1s^-1 and carrier concentrations as low as 7.6 × 10¹⁶ cm^-3 have been grown on (1120) a-sapphire substrates using low-temperature buffer layers, a slow substrate cooling process and a modified oxygen radical cell. Pole figure measurements reveal that a-plane sapphire substrates are effective for the elimination of 30^º rotation domains, which usually appear in the case of ZnO growth on c-sapphire. The low-temperature buffer layers allow high-temperature growth, because initial ZnO growth does not occur with high initial growth temperature. The use of slow substrate cooling prevents the deterioration of the electrical properties of the ZnO films. Use of quartz insulators in the oxygen radical cell eliminates aluminum contamination, which is a serious problem when using conventional alumina insulators.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 40 (1), 250-254, 2001

  The Japan Society of Applied Physics

キーワード

• ZnO
• RS-MBE
• buffer layer
• <i>a</i>-plane sapphire
• electrical property

詳細情報

• CRID: 1390001206251124608
• NII論文ID: 10005096493
• NII論文ID: 30021821362
• NII論文ID: 210000049310
• NII論文ID: 130004527844
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.40.250
• COI: 1:CAS:528:DC%2BD3MXpsFShsQ%3D%3D
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 5651694
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5651694
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.250
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.40.250/pdf
• 本文言語コード: en
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