Co/Siバルク拡散対における反応拡散

• 金 槿銖

  九州工業大学工学部物質工学科

• 下 敏唯

  九州工業大学機器分析センター

• 沖野 隆久

  日本文理大学工学部

• 李 贊揆

  韓国昌原大学工科大材料工学科

書誌事項

タイトル別名

• Reactive Diffusion in Bulk Co/Si Diffusion Couple
• Co Si バルク カクサンツイ ニ オケル ハンノウ カクサン

抄録

Reactive diffusion of the Co-Si binary system has been studied by using bulk diffusion couples consisting of a 99.98% and 99.997%Co plate and a ⟨100⟩ oriented Si wafer in the temperature range from 973 K to 1273 K. The experimental results were compared with the previous results obtained by using Co thin film/bulk Si and bulk Co/bulk Si diffusion couples. In these bulk diffusion couples, 3 kinds of Co silicides (Co₂Si, CoSi, CoSi₂) were formed. All of them grew according to the parabolic law. The interdiffusion coefficients of CoSi in the bulk diffusion couples almost coincide with the values for thin film diffusion couples. However, the values of interdiffusion coefficients of Co₂Si for the bulk diffusion couples and thin film diffusion couples do not agree with each other. If the first crystalline phase is Co₂Si in Co/Si diffusion couples, the reason for the difference in interdiffusion coefficients between the thin film and bulk samples can be explained by the fast diffusion such as grain boundary diffusion in the thin film diffusion couples.

収録刊行物

• 日本金属学会誌

  日本金属学会誌 64 (9), 771-775, 2000

  公益社団法人 日本金属学会

キーワード

• cobalt-silicon system
• reactive diffusion
• Cobalt silicide
• phase growth rate
• interdiffusion coefficient
• bulk diffusion

詳細情報

• CRID: 1390001206491314688
• NII論文ID: 10005342897
• NII書誌ID: AN00187860
• DOI: 10.2320/jinstmet1952.64.9_771
• ISSN: 18806880
• ISSN: 24337501
• ISSN: 00214876
• NDL書誌ID: 5491604
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5491604
• Web Site: https://www.jstage.jst.go.jp/article/jinstmet1952/64/9/64_9_771/_pdf
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