書誌事項
- タイトル別名
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- Structural Analysis of Buried Amorphous Layer in Oxygen-Ion-Implanted Silicon Carbide
- サンソ イオン チュウニュウ シリコンカーバイド ニ オケル ウメコミ ヒショウシツソウ ノ コウゾウ カイセキ
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We performed oxygen-ion-implantation into silicon carbide (SiC) to produce SiC-on-insulator structures. Single crystals of 6H-SiC (0001) wafer were implanted with 180 keV oxygen ions at 923 K to fluences ranging 0.2−1.4×1018 cm−2. Microstructures of the specimens were examined using cross-sectional transmission electron microscopy and scanning transmission electron microscopy (STEM) equipped with an energy dispersive X-ray spectrometer (EDXS) and an electron energy-loss spectrometer (EELS). A continuous buried amorphous layer is formed in specimens subjected to ion fluences ≥0.4×1018 cm−2. The amorphous structures change drastically between 0.7 and 1.4×1018 cm−2. STEM-EDXS/EELS measurements show that the sample irradiated to fluences of ≤0.7×1018 cm−2 possesses a buried amorphous SiCxOy layer, and oxygen concentration peaks around the center of the buried amorphous layer. On the other hand, a well-defined SiO2 layer including self-bonded carbon atoms is formed in the crystal irradiated to a fluence of 1.4×1018 cm−2, and this amorphous layer has a layered structure due to compositional variations of silicon, carbon, and oxygen. The formation of Si-O and C-C bondings is also confirmed by pair-correlation functions extracted from Fourier transformation of nano-beam electron diffraction patterns. These results indicate that the high-dose oxygen-ion-implantation is a viable means to produce SiC-on-insulator structures.
収録刊行物
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- 日本金属学会誌
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日本金属学会誌 65 (5), 361-365, 2001
公益社団法人 日本金属学会
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詳細情報 詳細情報について
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- CRID
- 1390001206491303424
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- NII論文ID
- 10007480968
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- NII書誌ID
- AN00187860
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- ISSN
- 18806880
- 24337501
- 00214876
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- NDL書誌ID
- 5780479
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- JaLC
- NDL
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