Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B2O3 Flux

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  • Tajima Kazuki
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • Ogasawara Takuma
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • Narushima Takayuki
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • Ouchi Chiaki
    Department of Metallurgy, Graduate School of Engineering, Tohoku University
  • Iguchi Yasutaka
    Department of Metallurgy, Graduate School of Engineering, Tohoku University

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タイトル別名
  • Behavior of Oxygen in Ga-As Melts with the Range of As Content up to 5 mass% Equilibrated with B<SUB>2</SUB>O<SUB>3</SUB> Flux
  • Behavior of Oxygen in Ga As Melts with the Range of As Content up to 5massパーセント Equilibrated with B2O3 Flux

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抄録

The equilibrium between Ga–As melt, containing arsenic up to 5 mass%, and B2O3 flux was investigated from 1273 to 1523 K in a silica ampoule. The effect of arsenic on equilibrium contents of oxygen, boron and silicon in the melt was investigated. The results were analyzed using interaction parameters. The equilibrium distribution ratio of oxygen between Ga–As melt and B2O3 flux decreased with the increase of temperature, Ga2O3 content in the flux and arsenic content in the melt. The activity of Ga2O3 in the B2O3 flux was determined in the temperature range from 1273 to 1523 K, which is relevant to the practical process of crystal growth of GaAs.

収録刊行物

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 42 (11), 2434-2439, 2001

    公益社団法人 日本金属学会

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