分子動力学法によるシリコン酸化膜の大規模モデリング  [in Japanese] Large-scale Modeling of Silicon-dioxide Films by Means of Molecular Dynamics  [in Japanese]

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Abstract

Large-scale modeling of ultra-thin SiO<Sub>2</Sub> films on Si(001) surfaces has been performed by means of molecular dynamics utilizing our original inter-atomic potential energy function for Si, O mixed systems. The SiO<Sub>2</Sub> film is formed by layer-by-layer insertion of O atoms into Si-Si bonds in a Si wafer from the surface. The obtained models reproduce quantitatively the structural transition layers near the interface. Through a modeling of vicinal SiO<Sub>2</Sub>/Si(001) model including atomic steps, it has been found that oxide film near the step-edge is preferentially amorphized. For a more advanced modeling method, we propose a new simulation procedure where O atoms are introduced into the substrate in one-by-one manner. In the calculation, the oxidation is started from the surface and abrupt change in composition at the SiO<Sub>2</Sub>/Si interface is reproduced. Thus, the classical molecular dynamics is a powerful method together with a simplified inter-atomic potential function applicable to mixed systems.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 23(2), 74-80, 2002-02-10

    The Surface Science Society of Japan

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Codes

  • NII Article ID (NAID)
    10008008281
  • NII NACSIS-CAT ID (NCID)
    AN00334149
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03885321
  • NDL Article ID
    6066167
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-379
  • Data Source
    CJP  NDL  J-STAGE 
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