STMナノスペクトロスコピー  [in Japanese] STM-Nanospectroscopy  [in Japanese]

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Author(s)

    • 飛田 聡 HIDA Akira
    • 東京大学大学院工学系研究科物理工学専攻 Department of Applied Physics, School of Engineering, The University of Tokyo
    • 目良 裕 MERA Yutaka
    • 東京大学大学院工学系研究科物理工学専攻 Department of Applied Physics, School of Engineering, The University of Tokyo
    • 前田 康二 MAEDA Koji
    • 東京大学大学院工学系研究科物理工学専攻 Department of Applied Physics, School of Engineering, The University of Tokyo

Abstract

A novel instrumentation has been made by coupling scanning tunneling microscopy (STM) with optical spectroscopic techniques that allow measurements of electronic band structures and, localized electronic states of isolated centers with an extremely high spatialresolution. The great analytical power of the STM-nanospectroscopy was demonstrated by presenting results of experiments on a nano-scale spatial variation of bandgap energy in a low-temperature grown (LT-) GaAs epi-film and photoabsorption spectra of isolated defects forming a localized energy level in the band gap.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 23(4), 224-232, 2002-04-10

    The Surface Science Society of Japan

References:  30

  • <no title>

    WEIMER M.

    Phys. Rev. B39, 5572, 1989

    Cited by (1)

  • <no title>

    MCELLISTREM M.

    Phys.Rev.Lett. 70, 2471, 1993

    Cited by (4)

  • <no title>

    ASPNES D. E.

    Phys.Rev. 147, 554, 1966

    Cited by (5)

  • <no title>

    CARDONA M.

    Modulation Spectroscopy, 1969

    Cited by (7)

  • <no title>

    HIDA A.

    Appl. Phys. Lett. 78, 3029, 2001

    Cited by (3)

  • <no title>

    HIDA A.

    Solid State Phenom. 79, 419, 2001

    Cited by (1)

  • <no title>

    MONCH W.

    Semiconductor Surfaces and Interfaces 79, 1995

    Cited by (1)

  • <no title>

    CHAHILL D. G.

    J. Vac. Sci. Technol. B9, 564, 1991

    Cited by (1)

  • <no title>

    GRAFSTROM S.

    J. Appl. Phys. 83, 3453, 1998

    Cited by (3)

  • <no title>

    POLLAK F. H.

    Phys. Rev. 142, 530, 1966

    Cited by (1)

  • <no title>

    CHELIKOWSY J. R.

    Phys. Rev. B20, 4150, 1972

    Cited by (1)

  • <no title>

    FROVA A.

    Phys. Rev. 145, 575, 1966

    Cited by (1)

  • <no title>

    SMITH F. W.

    IEEE Electron Device Letters EDL-9, 77, 1988

    Cited by (2)

  • <no title>

    POLLAK F. H.

    Phys. Rev. Lett. 16, 942, 1966

    Cited by (1)

  • <no title>

    LIU X.

    Appl.Phys.Lett. 67, 279, 1995

    Cited by (7)

  • <no title>

    CAPAZ R. B.

    Phys. Rev. Lett. 75, 1811, 1995

    Cited by (4)

  • <no title>

    ZHANG S. B.

    Phys. Rev. B60, 4462, 1999

    Cited by (1)

  • <no title>

    HIDA A.

    Maeda: Physica B308-310, 1145, 2001

    Cited by (1)

  • <no title>

    FEENSTRA R. M.

    Phys.Rev.Lett. 71, 1176, 1993

    Cited by (6)

  • <no title>

    GRANDIDIER B.

    Appl. Phys. Lett. 76, 3142, 2000

    Cited by (2)

  • <no title>

    HIDA A.

    Physica B308-310, 738, 2001

    Cited by (1)

  • <no title>

    BARAFF G. A.

    Phys. Rev. Lett. 55, 1327, 1985

    Cited by (7)

  • <no title>

    ZHANG S. B.

    Phys. Rev. Lett. 77, 119, 1986

    Cited by (1)

  • <no title>

    LENGEL G.

    Phys.Rev.Lett. 72, 836, 1994

    Cited by (2)

  • <no title>

    HIDA A.

    Appl. Phys. Lett. 78, 3190, 2001

    Cited by (2)

  • <no title>

    FISHER D. W.

    Appl. Phys. Lett. 50, 1751, 1987

    Cited by (1)

  • <no title>

    MAEDA K.

    Mater. Sci. Eng. B42, 127, 1986

    Cited by (1)

  • <no title>

    飛田聡

    日本物理学会1999年秋の分科会26, YL-10

    Cited by (1)

  • <no title>

    HAMERS R. J.

    J.Vac.Sci.& Technol. A8, 3524, 1990

    DOI  Cited by (4)

  • <no title>

    BRAGAS A. V.

    J.Appl.Phys. 82, 4153, 1997

    DOI  Cited by (7)

Cited by:  1

Codes

  • NII Article ID (NAID)
    10008008489
  • NII NACSIS-CAT ID (NCID)
    AN00334149
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03885321
  • NDL Article ID
    6135242
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-379
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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