走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用  [in Japanese] Application of Scanning Probe Microscopes to Magnetic Semiconductor and Colossal Magnetoresistive Material  [in Japanese]

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Abstract

The existence of magnetic domain has been known for a long time, and its importance is further growing because of rapid storage density increase of recording media. Magnetic domain observations made it possible to derive the microscopic magnetic parameters such as the magnetic anisotropy and the domain wall energy connected with exchange interaction in addition to the size of magnetic domain. Among the various methods for observing the magnetic domain, scanning probe microscopes are powerful tools owing to the user-friendliness and the flexibility to sample specimen and measurement environment. These instruments enable us to evaluate three dimensional magnetic domain structure and to explore novel magnetic materials in a high throughput way. Here, we show the results obtained from the measurements of ferromagnetic semiconductors, Mn doped GaAs and Co doped TiO<Sub>2</Sub> thin films, and a colossal magnetoresistive material, La<Sub>1−<I>x</I></Sub>Sr<Sub><I>x</I></Sub>MnO<Sub>3</Sub> composition-spread film.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 23(4), 233-238, 2002-04-10

    The Surface Science Society of Japan

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Codes

  • NII Article ID (NAID)
    10008008520
  • NII NACSIS-CAT ID (NCID)
    AN00334149
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03885321
  • NDL Article ID
    6135258
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-379
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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