Application of Scanning Probe Microscopes to Magnetic Semiconductor and Colossal Magnetoresistive Material.
-
- FUKUMURA Tomoteru
- Institute for Materials Research, Tohoku University
-
- HASEGAWA Tetsuya
- Materials and Structure Laboratory, Tokyo Institute of Technology
Bibliographic Information
- Other Title
-
- 走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用
- 総合報告・研究紹介 走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用
- ソウゴウ ホウコク ケンキュウ ショウカイ ソウサガタ プローブ ケンビキョウ ノ ジセイ ハンドウタイ オヨビ チョウキョダイ ジキ テイコウ ザイリョウ エ ノ テキヨウ
Search this article
Abstract
The existence of magnetic domain has been known for a long time, and its importance is further growing because of rapid storage density increase of recording media. Magnetic domain observations made it possible to derive the microscopic magnetic parameters such as the magnetic anisotropy and the domain wall energy connected with exchange interaction in addition to the size of magnetic domain. Among the various methods for observing the magnetic domain, scanning probe microscopes are powerful tools owing to the user-friendliness and the flexibility to sample specimen and measurement environment. These instruments enable us to evaluate three dimensional magnetic domain structure and to explore novel magnetic materials in a high throughput way. Here, we show the results obtained from the measurements of ferromagnetic semiconductors, Mn doped GaAs and Co doped TiO2 thin films, and a colossal magnetoresistive material, La1−xSrxMnO3 composition-spread film.
Journal
-
- Hyomen Kagaku
-
Hyomen Kagaku 23 (4), 233-238, 2002
The Surface Science Society of Japan
- Tweet
Details 詳細情報について
-
- CRID
- 1390001206456147200
-
- NII Article ID
- 10008008520
-
- NII Book ID
- AN00334149
-
- COI
- 1:CAS:528:DC%2BD38XksFSrsro%3D
-
- ISSN
- 18814743
- 03885321
-
- NDL BIB ID
- 6135258
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed