フラックス法によるGaN単結晶の育成  [in Japanese] GaN single crystal growth by the flux method  [in Japanese]

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Author(s)

    • 青木 真登 AOKI Masato
    • 東北大学多元物質科学研究所 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
    • 皿山 正二 SARAYAMA Seiji
    • (株)リコー研究開発本部中央研究所第一材料・デバイス研究センター Materials and Devices R & D, Department 1, R & D Center, Research and Development Group, Ricoh Company Ltd.

Journal

  • 應用物理

    應用物理 71(5), 548-552, 2002-05-10

    応用物理学会

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Codes

  • NII Article ID (NAID)
    10008200991
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03698009
  • NDL Article ID
    6127744
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  CJPref  NDL 
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