強誘電体ゲート電界効果トランジスタメモリーのための強誘電体-絶縁体-半導体構造 : メモリー保持特性の解析と改善  [in Japanese] Ferroelectric-insulator-semiconductor structure for field-effect transistor memory : Analysis and improvement of memory retention characteristics  [in Japanese]

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Author(s)

Journal

  • 應用物理

    應用物理 71(5), 566-570, 2002-05-10

    応用物理学会

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    DOI  Cited by (28)

Codes

  • NII Article ID (NAID)
    10008201065
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03698009
  • NDL Article ID
    6127886
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  NDL 
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