プラズマ酸窒化中のシリコン表面応力変動 [in Japanese] Surface Stress during Plasma Oxidation and following Nitridation [in Japanese]
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We have observed a stress relaxation of a silicon oxide film made by plasma oxidation with the following nitridation. The radical nitridation reduces the compressive surface stress of the film expansion about 40-80%. This relaxation is larger than that of electron irradiation on the oxide film, which can reduce a disorder-induced surface stress. AES measurement shows the concentration of nitrogen does not precipitate on the SiO<SUB>2</SUB>/Si interface but is uniform in the film and is only 3 atom.% in the film.
Shinku 45(3), 127-129, 2002-03-20
The Vacuum Society of Japan