プラズマ酸窒化中のシリコン表面応力変動  [in Japanese] Surface Stress during Plasma Oxidation and following Nitridation  [in Japanese]

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Author(s)

Abstract

We have observed a stress relaxation of a silicon oxide film made by plasma oxidation with the following nitridation. The radical nitridation reduces the compressive surface stress of the film expansion about 40-80%. This relaxation is larger than that of electron irradiation on the oxide film, which can reduce a disorder-induced surface stress. AES measurement shows the concentration of nitrogen does not precipitate on the SiO<SUB>2</SUB>/Si interface but is uniform in the film and is only 3 atom.% in the film.

Journal

  • Shinku

    Shinku 45(3), 127-129, 2002-03-20

    The Vacuum Society of Japan

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Codes

  • NII Article ID (NAID)
    10008202783
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144090
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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