絶縁体上のシリコン層(SOI)に形成したデバイスにおけるタングステンコンタクト不良の構造解析  [in Japanese] Structure Analysis of Tungsten Contact Failure in Silicon on Insulator Device  [in Japanese]

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Author(s)

Abstract

We analyzed the leakage current failure in the silicon (Si) on insulator devices. The failure sites were detected by light emission microscopy, and they were found to be tungsten (W) contacts. The cross section of the failed W contact was processed by focused ion beam, and it was observed by scanning ion and transmission electron microscopes. The defect goes the through active Si and buried SiO<SUB>2</SUB> layer from the buried W and arrives at the Si substrate. Our Auger electron spectroscopy analysis and energy-dispersive x-ray spectroscopy analysis identified that the defect included W, and that the active Si layer included a slight crystal defect. Our analysis suggests that the failure mechanism is over-etching of reactive ion etching (RIE) and a crystal defect of active Si layer. If the etching speed of the defective crystal is faster than the normal Si, a void is formed in the SiO<SUB>2</SUB> layer. Currently, the RIE process was improved, the crystal defect decreased, and the leakage current failure mode in the W contact decreased.

Journal

  • Shinku

    Shinku 45(3), 130-133, 2002-03-20

    The Vacuum Society of Japan

References:  4

  • <no title>

    UEKI T.

    Jpn. J. Appl. Phys 37, 256-260, 1998

    Cited by (1)

  • <no title>

    NAKASHIMA S.

    Inter. IEEE, SOI Conf., 124-125, 1996

    Cited by (1)

  • <no title>

    伊藤

    半導体研究 30, 113-160, 1989

    Cited by (1)

  • <no title>

    KHURANA N.

    IEEE, 24th Proc. of Reliability Physics Symp., 189-194, 1986

    Cited by (9)

Codes

  • NII Article ID (NAID)
    10008202793
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144105
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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