シリコン中窒素による赤外吸収機構の解明  [in Japanese] Analysis of Mechanism of Infrared Absorption Caused by Nitrogen in Silicon  [in Japanese]

Access this Article

Search this Article

Author(s)

Abstract

Nitrogen doping has attracted much attention because it reduces secondary defects. It is important for clarification of this reduction mechanism and for nitrogen concentration measurement to reveal the nitrogen configurations and the origin of infrared absorption bands. In this paper, the atomic-level behavior of around nitrogen is revealed by using molecular orbital method and valence force method. We clarified normal vibration of interstitial nitrogen pair, nitrogenvacancy complexes and nitrogen-oxtgen complexes.

Journal

  • Shinku

    Shinku 45(3), 184-187, 2002-03-20

    The Vacuum Society of Japan

References:  4

  • <no title>

    IIDA M.

    Defects in Silicon 3, 499, 1999

    Cited by (1)

  • <no title>

    JONES R.

    Semicond. Sci. Technol. 9, 2145, 1994

    Cited by (8)

  • <no title>

    QI M. W.

    J. Appl. Phys. 69, 3775, 1991

    Cited by (2)

  • <no title>

    WAGNER P.

    Appl. Phys. A 46, 73, 1988

    Cited by (2)

Codes

  • NII Article ID (NAID)
    10008202909
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144209
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
Page Top