シリコン中窒素による赤外吸収機構の解明 [in Japanese] Analysis of Mechanism of Infrared Absorption Caused by Nitrogen in Silicon [in Japanese]
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Nitrogen doping has attracted much attention because it reduces secondary defects. It is important for clarification of this reduction mechanism and for nitrogen concentration measurement to reveal the nitrogen configurations and the origin of infrared absorption bands. In this paper, the atomic-level behavior of around nitrogen is revealed by using molecular orbital method and valence force method. We clarified normal vibration of interstitial nitrogen pair, nitrogenvacancy complexes and nitrogen-oxtgen complexes.
Shinku 45(3), 184-187, 2002-03-20
The Vacuum Society of Japan