臭素によるSi(111)表面のエッチング過程の高感度測定 [in Japanese] Measurement of the Etching Process of Br/Si(111) by Means of the High Sensitive Mass Spectroscopy [in Japanese]
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We constructed the very sensitive pulsecount-detector system to study the desorption from semiconductor surface in the ultra-high vacuum. We show the results of thermal desorption from Br/Si (111). According to thermal desorption spectroscopy, three peaks are identified in the SiBr2 (187.8 amu) spectra. From the time-course of the isothermal desorption yield as a function of time, the peak at 950 K is turned out to be of the 2nd order, and from its tempereture dependence it exhibits 2.2 eV of the potential barrier. The barriers of the peaks at 800 K and at 600 K are 0.3 ± 0.1 eV and 0.5 ± 0.1 eV, respectively.
Shinku 45(3), 192-195, 2002-03-20
The Vacuum Society of Japan