Measurement of the Etching Process of Br/Si(111) by Means of the High Sensitive Mass Spectroscopy.

• NAKAJIMA Toshinobu

  Department of Physics, Yokohama National University RIKEN SPring-8

• SHUDO Kenichi

  Department of Physics, Yokohama National University RIKEN SPring-8

• SHIRAO Tetsurou

  Department of Physics, Yokohama National University RIKEN SPring-8

• TANAKA Yoshihito

  RIKEN SPring-8

• ISHIKAWA Tetsuya

  RIKEN SPring-8

• TANAKA Masatoshi

  Department of Physics, Yokohama National University

Bibliographic Information

Other Title

• 臭素によるＳｉ（１１１）表面のエッチング過程の高感度測定
• シュウソ ニ ヨル Si 111 ヒョウメン ノ エッチング カテイ ノ コウカンド ソクテイ

Abstract

We constructed the very sensitive pulsecount-detector system to study the desorption from semiconductor surface in the ultra-high vacuum. We show the results of thermal desorption from Br/Si (111). According to thermal desorption spectroscopy, three peaks are identified in the SiBr2 (187.8 amu) spectra. From the time-course of the isothermal desorption yield as a function of time, the peak at 950 K is turned out to be of the 2nd order, and from its tempereture dependence it exhibits 2.2 eV of the potential barrier. The barriers of the peaks at 800 K and at 600 K are 0.3 ± 0.1 eV and 0.5 ± 0.1 eV, respectively.

Journal

• Shinku

  Shinku 45 (3), 192-195, 2002

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390001204064723200
• NII Article ID: 10008202919
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.45.192
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 6144219
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6144219
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed