Si(111)表面上におけるBaとNH_3の反応に関する研究 [in Japanese] The Study of the Reaction of Ba and NH_3 on Si(111) Surfaces [in Japanese]
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In order to understand the fundamental character for forming Ba<SUB>3</SUB>N on Si (111) surface, the following two studies have been carried out by means of Low Energy Electron Diffraction (LEED), and Auger Electron Spectroscopy (AES) and Ultraviolet Photoemission Spectroscopy (UPS). 1) Whether silicon nitride layer would be accepted as a diffusion barrier between Ba and Si layer was examined. Ba and Si atoms formed a compound layer above 400 degree Centigrade, so that the silicon nitride layer was disqualified as a diffusion barrier between Ba and Si layer. 2) The electronic states in the coadsorption of Ba and NH<SUB>3</SUB> on Si (111) surface were investigated. When less than 2 MLs Ba adsorbed Si (111) surface was exposed to NH<SUB>3</SUB>, the electronic states of Ba-N, N-H, and the lonepair electron pair of NH<SUB>3</SUB> appeared, and when more than 2 MLs Ba adsorbed Si (111) surface was exposed to NH<SUB>3</SUB>, the electronic states of Ba-H appeared in addition to three electronic states mentioned above.
Shinku 45(3), 196-199, 2002-03-20
The Vacuum Society of Japan