The Study of the Reaction of Ba and NH3 on Si(111) Surfaces.

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  • FUKUI Yujiro
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University
  • SAKAMOTO Yosuke
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University
  • AONO Masaaki
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University
  • WATANABE Keishi
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University
  • HONGO Shozo
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University
  • URANO Toshio
    Department of Electric and Electronics Engineering, Faculty of Engineering, Kobe University

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Other Title
  • Ｓｉ（１１１）表面上におけるＢａとＮＨ３の反応に関する研究
  • Si 111 ヒョウメン ジョウ ニ オケル Ba ト NH3 ノ ハンノウ ニ カンスル ケンキュウ

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Abstract

In order to understand the fundamental character for forming Ba3N on Si (111) surface, the following two studies have been carried out by means of Low Energy Electron Diffraction (LEED), and Auger Electron Spectroscopy (AES) and Ultraviolet Photoemission Spectroscopy (UPS). 1) Whether silicon nitride layer would be accepted as a diffusion barrier between Ba and Si layer was examined. Ba and Si atoms formed a compound layer above 400 degree Centigrade, so that the silicon nitride layer was disqualified as a diffusion barrier between Ba and Si layer. 2) The electronic states in the coadsorption of Ba and NH3 on Si (111) surface were investigated. When less than 2 MLs Ba adsorbed Si (111) surface was exposed to NH3, the electronic states of Ba-N, N-H, and the lonepair electron pair of NH3 appeared, and when more than 2 MLs Ba adsorbed Si (111) surface was exposed to NH3, the electronic states of Ba-H appeared in addition to three electronic states mentioned above.

Journal

  • Shinku

    Shinku 45 (3), 196-199, 2002

    The Vacuum Society of Japan

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