イオンビームスパッタリング法による窒化炭素系積層多層薄膜の合成と評価 [in Japanese] Characterization of MN/CN_x (M : Ti, Zr) Multilayer Thin Films Prepared by Ion Beam Sputtering Method [in Japanese]
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TiN/CN<SUB>x</SUB> and ZrN/CN<SUB>x</SUB> multilayered thin films were deposited on Corning#7059 glass substrates by a dual ion beam sputtering (IBS) system with an Ar ion source for sputtering the target and a N<SUB>2</SUB> ion source for bombarding the substrate. The multilayered thin films were deposited by alternately sputtering Ti or Zr and C targets. Total film thickness was 400 nm and multilayered period λ changed from 5 to 160 nm. The properties of the multilayered thin films were examined by X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), Knoop indenter, and the internal residual stress of the multilayered thin films were examined by multi-beam optical sensor (MOS).<BR>The low angle XRD patterns of the both multilayered thin films exhibited a characteristic of long-range modulation structure. TiN/CN<SUB>x</SUB> multilayered films consisted from microcrystalline TiN and amorphous CN<SUB>x</SUB> exhibited an increasing of TiN crystallization and a strong TiN (200) preferred crystal orientation. The deposited multilayered thin films indicated a maximum value in hardness and the large internal residual stress generation in a function of the multilayered periods λ.
Shinku 45(3), 208-211, 2002-03-20
The Vacuum Society of Japan