マグネトロンスパッタ法による遷移金属炭化物薄膜の形成と冷陰極材料としての評価 Magnetron Sputter Deposition of Transition Metal Carbide Thin Films and Their Evaluation as a Cold Cathode
Transition metal carbide thin films were prepared by radio frequency magnetron sputter deposition. The target used was hafnium carbide and tantalum carbide, and sputtering was taken place by argon gas discharge. It was necessary to adjust the sputtering condition, in order to obtain carbide films, otherwise the resultant films contained much oxygen. Higher gas pressure and lower input power gave almost stoichiometry carbide films for tantalum, whlie the condition was not still appropriate for hafnium. We have evaluated crystallinity and work function of the deposited films.
真空 45(3), 212-214, 2002-03-20