マグネトロンスパッタ法による遷移金属炭化物薄膜の形成と冷陰極材料としての評価  [in Japanese] Magnetron Sputter Deposition of Transition Metal Carbide Thin Films and Their Evaluation as a Cold Cathode  [in Japanese]

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Author(s)

    • 後藤 康仁 GOTOH Yasuhito
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 紀和 伸政 KIWA Nobumasa
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 辻 博司 [他] TSUJI Hiroshi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 石川 順三 ISHIKAWA Junzo
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University

Abstract

Transition metal carbide thin films were prepared by radio frequency magnetron sputter deposition. The target used was hafnium carbide and tantalum carbide, and sputtering was taken place by argon gas discharge. It was necessary to adjust the sputtering condition, in order to obtain carbide films, otherwise the resultant films contained much oxygen. Higher gas pressure and lower input power gave almost stoichiometry carbide films for tantalum, whlie the condition was not still appropriate for hafnium. We have evaluated crystallinity and work function of the deposited films.

Journal

  • Shinku

    Shinku 45(3), 212-214, 2002-03-20

    The Vacuum Society of Japan

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Codes

  • NII Article ID (NAID)
    10008202981
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144507
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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