イオンビームアシスト蒸着法による窒化ニオブ薄膜の配向制御  [in Japanese] Orientation Control of Niobium Nitride Thin Films by Ion Beam Assisted Deposition  [in Japanese]

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Author(s)

    • 後藤 康仁 GOTOH Yasuhito
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 北井 秀憲 KITAI Hidenori
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 辻 博司 [他] TSUJI Hiroshi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 石川 順三 ISHIKAWA Junzo
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University

Abstract

The orientation of the niboium nitride thin films was controlled by the assisting ion energy and its incident angle to the substrate in ion beam assisted deposition technique. The films were deposited under the different ion incident angle and ion energy, and their orientation was evaluated by x-ray diffraction. The work function was also measured by Kelvin probe. As a result, it was found that the c-axis of the crystallites were grown along the direction perpendicular to the ion incident angle. The tendency was more prominent when the ion energy was increased. However, the difference in the work function among the deposited samples was not large, probably due to the fact that the films were still polycrystaline.

Journal

  • Shinku

    Shinku 45(3), 215-218, 2002-03-20

    The Vacuum Society of Japan

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    DOI  Cited by (6)

Codes

  • NII Article ID (NAID)
    10008202990
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144512
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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