パルスレーザー堆積法によるB-C-N系薄膜の合成 [in Japanese] Synthesis of B-C-N Thin Films by Pulsed Laser Deposition [in Japanese]
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B-C-N thin films were deposited onto Si (100) substrates by pulsed laser deposition (PLD) using B<SUB>4</SUB>C target under nitrogen radical beam irradiation. The deposited films were characterized by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The compositions of the films were almost B<SUB>45</SUB>C<SUB>25</SUB>N<SUB>25</SUB>. FT-IR and XPS spectra indicate existence of B-C and C-N bonds as well as that of B-N and C-C bond within the films deposited at room temperature. Phase separation into graphite and h-BN was observed in the film deposited at high temperatures.
Shinku 45(3), 219-222, 2002-03-20
The Vacuum Society of Japan