パルスレーザー堆積法によるB-C-N系薄膜の合成  [in Japanese] Synthesis of B-C-N Thin Films by Pulsed Laser Deposition  [in Japanese]

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Author(s)

Abstract

B-C-N thin films were deposited onto Si (100) substrates by pulsed laser deposition (PLD) using B<SUB>4</SUB>C target under nitrogen radical beam irradiation. The deposited films were characterized by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The compositions of the films were almost B<SUB>45</SUB>C<SUB>25</SUB>N<SUB>25</SUB>. FT-IR and XPS spectra indicate existence of B-C and C-N bonds as well as that of B-N and C-C bond within the films deposited at room temperature. Phase separation into graphite and h-BN was observed in the film deposited at high temperatures.

Journal

  • Shinku

    Shinku 45(3), 219-222, 2002-03-20

    The Vacuum Society of Japan

References:  6

Codes

  • NII Article ID (NAID)
    10008202998
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144518
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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