パルスレーザー堆積法によるＢ‐Ｃ‐Ｎ系薄膜の合成

• 青井 芳史

  龍谷大学理工学部物質化学科

• 上條 栄冶

  龍谷大学理工学部物質化学科

書誌事項

タイトル別名

• Synthesis of B-C-N Thin Films by Pulsed Laser Deposition.
• パルスレーザー タイセキホウ ニ ヨル B C Nケイ ハクマク ノ ゴウセイ

抄録

B-C-N thin films were deposited onto Si (100) substrates by pulsed laser deposition (PLD) using B₄C target under nitrogen radical beam irradiation. The deposited films were characterized by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The compositions of the films were almost B₄₅C₂₅N₂₅. FT-IR and XPS spectra indicate existence of B-C and C-N bonds as well as that of B-N and C-C bond within the films deposited at room temperature. Phase separation into graphite and h-BN was observed in the film deposited at high temperatures.

収録刊行物

• 真空

  真空 45 (3), 219-222, 2002

  一般社団法人 日本真空学会

キーワード

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

詳細情報

• CRID: 1390282679041524352
• NII論文ID: 10008202998
• NII書誌ID: AN00119871
• DOI: 10.3131/jvsj.45.219
• ISSN: 18809413
• ISSN: 05598516
• NDL書誌ID: 6144518
• Web Site: http://id.ndl.go.jp/bib/6144518
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6144518
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可