Synthesis of B-C-N Thin Films by Pulsed Laser Deposition.

• AOI Yoshifumi

  Faculty of Science and Technology, Ryukoku University

• KAMIJO Eiji

  Faculty of Science and Technology, Ryukoku University

Bibliographic Information

Other Title

• パルスレーザー堆積法によるＢ‐Ｃ‐Ｎ系薄膜の合成
• パルスレーザー タイセキホウ ニ ヨル B C Nケイ ハクマク ノ ゴウセイ

Abstract

B-C-N thin films were deposited onto Si (100) substrates by pulsed laser deposition (PLD) using B₄C target under nitrogen radical beam irradiation. The deposited films were characterized by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Fourier transform infrared spectroscopy (FT-IR). The compositions of the films were almost B₄₅C₂₅N₂₅. FT-IR and XPS spectra indicate existence of B-C and C-N bonds as well as that of B-N and C-C bond within the films deposited at room temperature. Phase separation into graphite and h-BN was observed in the film deposited at high temperatures.

Journal

• Shinku

  Shinku 45 (3), 219-222, 2002

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390282679041524352
• NII Article ID: 10008202998
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.45.219
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 6144518
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6144518
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed