メタンとフッ化硫黄を用いたマグネトロンスパッタ法によって作製したa-SiCS:H:F薄膜  [in Japanese] Amorphous SiCS:H:F Films Prepared by Magnetron Sputtering of Si in CH_4 and SF_6  [in Japanese]

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Author(s)

Abstract

Amorphous SiCS : H : F films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH<SUB>4</SUB> and SF<SUB>6</SUB> gas mixtures. The effects of SF<SUB>6</SUB> partial pressure ratio <I>R</I> on the electrical and optical properties of the films were investigated.<BR>With increasing <I>R</I>, sulfur-related bonding configuration can be observed. The photoconductivity shows a maximum below <I>R</I>= 20%, whereas the optical bandgap almost unchanges and the dark conductivity increases slightly. These data imply that S atoms may relax the disordered structure as well as acting as dopants in this range of<I>R</I>.

Journal

  • Shinku

    Shinku 45(3), 227-230, 2002-03-20

    The Vacuum Society of Japan

References:  19

Codes

  • NII Article ID (NAID)
    10008203011
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144530
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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