Baに誘起されたSi(111)微斜面における規則的ステップの低速電子線回折(LEED)・走査トンネル顕微鏡(STM)による観察  [in Japanese] Low Energy Electron Diffraction and Scanning Tunneling Microscope Observation of Ba Induced Step Arrangement of Vicinal Si(111) Surface  [in Japanese]

Access this Article

Search this Article

Author(s)

Abstract

Adsorbed structures of Ba on Si (111) surfaces have been investigated by LEED (Low Energy Electron Diffraction) and STM (Scanning Tunneling Microscopy). We compared the vicinal substrate surface with the flat substrate surface of which the inclination from the (111) plane is small in order to confirm whether the step arrangement is caused by the proper miscut angle of substrate. On the vicinal Si (111) surface, one-dimensional 10×1 structure was observed by LEED and the step arrangement of 10-times the unit length terraces with a double-layer step height has been observed by STM after annealing at about 950°C. On the flat Si (111) surface, 3 domains of 5×1 have been observed in the same temperature range by LEED and STM. It was confirmed that the step arrangement was caused by a cooperation of a proper miscut angle of the substrate and the superstructure on the terrace.

Journal

  • Shinku

    Shinku 45(3), 277-280, 2002-03-20

    The Vacuum Society of Japan

References:  2

  • <no title>

    URANO T.

    Appl. Surf. Sci. 169, 88, 2001

    Cited by (1)

  • <no title>

    WEITERING H. H.

    Surf.Sci. 355, L271, 1996

    Cited by (7)

Codes

  • NII Article ID (NAID)
    10008203133
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144670
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
Page Top