Si(111)1×1表面上のSiアドアトムの有効電荷の研究 [in Japanese] Study on an Effective Charge of Si Adatoms on a Si(111)1×1 Surface [in Japanese]
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DC and AC parallel heating procedure was applied for quantitative study of in-phase step wandering instability on a Si (111) 1×1 vicinal surface induced by electromigration of Si adatoms. In-phase step wandering is one of the step instability where steps wander in-phase without changing step-step distance.<BR>By controlling dc component of heating current (or applied field) and temperature individually, dc current (or dc field) and temperature dependences of the period of the in-phase step wandering on the Si (111) 1×1 vicinal surface were investigated. Temperature dependence of an effective charge of Si adatoms on a Si (111) -1×1 surface was evaluated and at about 1270 K the effective charge is approximately 0.02 and it linearly decreases with temperature.
Shinku 45(3), 281-284, 2002-03-20
The Vacuum Society of Japan