Heガスを用いたBi_2Sr_2Ca_<n-1>Cu_nO_yスパッタ薄膜の組成制御 [in Japanese] Phase Control of Bi_2Sr_2Ca_<n-1>Cu_nO_y Sputtered Films using He Gas [in Japanese]
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We prepared Bi<SUB>2</SUB>Sr<SUB>2</SUB>Ca<SUB>n-1</SUB>Cu<SUB>n</SUB>O<SUB>y</SUB> (BSCCO) thin films by RF magnetron sputtering using a mixture of He + O<SUB>2</SUB> sputtering gas (He : O<SUB>2</SUB>= 4 : 1). As helium gas effectively generates active particles of O<SUB>2</SUB><SUP>+</SUP> and O<SUP>+</SUP> by the Penning ionization effect, the crystallinity of the films is expected to improve.<BR>The crystallinity and the composition of films were dependent on the composition of targets. When we prepared the Bi -2212 films using the targets of Bi : Sr : Ca : Cu = 2 : 2 : 1 : Z (Z = 1.0-3.0), the best crystallinity of the film was obtained using the target of Z = 2.0. Furthermore, we prepared the Bi-2223 films with the composition of target, Bi : Sr : Ca : Cu = 2 : 2 : 2 : 3. The films with dominant Bi-2223 single phase were obtained only at <I>T<SUB>sub</SUB></I> = 630°C, but Bi-2223 and Bi-2212 mixed phases appeared at the other substrate temperatures.
Shinku 45(3), 297-300, 2002-03-20
The Vacuum Society of Japan