シリコン基板を用いた単結晶酸化亜鉛薄膜の分子線エピタキシャル成長  [in Japanese] Molecular Beam Epitaxial Growth of the Single Crystalline ZnO Films on Silicon Substrates  [in Japanese]

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Author(s)

Abstract

It has been difficult to obtain single crystalline ZnO films on Si substrates due to the oxidation of Si surface during initial ZnO growth. In this letter, we report the growth of single crystalline ZnO films on Si (111) substrates using a buffer layer of CaF<SUB>2</SUB>. The films were grown by radical source molecular beam epitaxy, and revealed by x-ray diffraction to be in the c-axis orientation without in-plane rotational domains. An ultraviolet photoluminescence corresponding to the bandgap energy was dominant for the films even at room temperature. It is indicated by the results that the use of CaF<SUB>2</SUB> buffer layer is promising for the growth of high-quality ZnO (0001) films on Si (111) substrates.

Journal

  • Shinku

    Shinku 45(3), 301-304, 2002-03-20

    The Vacuum Society of Japan

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Codes

  • NII Article ID (NAID)
    10008203178
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144748
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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